Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy

Published:1996 Issue:8 Volume:79 Page:4318
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Yamada Akimasa,Makita Yunosuke,Niki Shigeru,Obara Akira,Fons Paul,Shibata Hajime,Kawai Michihiro,Chichibu Shigefusa,Nakanishi Hisayuki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference16 articles.

1. Ternary phase relations of the chalcopyrite compound CuGaSe2

2. Heteroepitaxy and characterization of CuInSe2 on GaAs(001)

3. Excitonic Structure of CuGaS2xSe2(1-x)and CuAlS2xSe2(1-x)

4. Aspects of the band structure of CuGaS2and CuGaSe2

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1. Dependence of Crystal‐Field Energy on Strain/Stress Sensed by Temperature Variation of Chalcopyrite Semiconductor (Optical) Band‐Gap for Efficient Band‐Gap Tuning in the CIS/CIGS Photovoltaic;physica status solidi (b);2024-08-07

2. Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se₂ Heterojunctions;ACS Applied Materials & Interfaces;2022-04-05

3. Surface Modifications of (ZnSe)0.5(CuGa2.5Se4.25)0.5 to Promote Photocatalytic Z-Scheme Overall Water Splitting;Journal of the American Chemical Society;2021-07-08

4. One-step electrodeposition of CuAlGaSe2 thin films using triethanolamine as a complexing agent;Thin Solid Films;2020-11

5. Electronic defects in Cu(In,Ga)Se2 : Towards a comprehensive model;Physical Review Materials;2019-09-23

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