Effect of silicon dioxide surface‐layer thickness on boron profiles for directly aligned implants into (100) silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329158
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1. A Review of Ion Implantation Technology for Image Sensors †;Sensors;2018-07-20
2. Critical angles and low-energy limits to ion channeling in silicon;Radiation Effects and Defects in Solids;1996-01
3. Sheet resistance uniformity monitoring of a medium-current ion implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02
4. Magnetic and electrical properties of Fe‐B‐N amorphous films (invited);Journal of Applied Physics;1985-04-15
5. Channeling of ions near the silicon 〈001〉 axis;Applied Physics Letters;1985-02-15
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