The nucleation and growth of glow‐discharge hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

The nucleation and growth of glow‐discharge hydrogenated amorphous silicon

Published:1986-02-15 Issue:4 Volume:59 Page:1160-1166
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Collins R. W.,Pawlowski A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.336553

Reference14 articles.

1. Transport and Defects in Amorphous Semiconductors, Bloomfield Hills, Michigan, 1984, edited by H. Fritzsche and M. A. Kastner, published in J. Non‐Cryst. Solids66(1984). JNCSBJ0022-3093

2. Microstructure of plasma‐deposited a‐Si : H films

3. Physical microstructure in device-quality hydrogenated amorphous silicon

4. Growth and structure of layered amorphous semiconductors

5. Surface analysis during vapour phase growth

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