ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2INTERFACES
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653234
Reference5 articles.
1. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
2. DENSITY OF SiO2–Si INTERFACE STATES
3. Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures
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