Electronic subbands for AlxGa1−xAs/GaAs multilayer and superlattice structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338819
Reference19 articles.
1. Confined electron states in GaAs-Ga1-xAlxAs (0.2⩽x⩽1.0) superlattices
2. Band mixing in semiconductor superlattices
3. Band mixing in semiconductor superlattices
4. k→⋅p→theory, effective-mass approach, and spin splitting for two-dimensional electrons in GaAs-GaAlAs heterostructures
5. k→⋅p→theory, effective-mass approach, and spin splitting for two-dimensional electrons in GaAs-GaAlAs heterostructures
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Absorption coefficient in type-II GaAs/AlAs short-period superlattices;Physical Review B;1994-01-15
2. Some aspects of the physics of man-made semiconductor heterosystems: superlattice electronic structure and related topics;Surface Science Reports;1993-11
3. Design of AlGaAs/GaAs quantum wells for electroabsorption modulators;Solid-State Electronics;1993-09
4. Finite-element analysis of the miniband structures of semiconductor superlattices with arbitrary periodic potential profiles;IEEE Journal of Quantum Electronics;1991
5. Two-Band Envelope Function Model for Graded Interfaces;physica status solidi (b);1990-04-01
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