Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2349317
Reference22 articles.
1. Self-Ordering of a Ge Island Single Layer Induced by Si Overgrowth
2. Diffusion Dynamics during the Nucleation and Growth ofGe/SiNanostructures on Si(111)
3. Ge dots and nanostructures grown epitaxially on Si
4. Ge dot organization on Si substrates patterned by focused ion beam
5. Nucleationless Three-Dimensional Island Formation in Low-Misfit Heteroepitaxy
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1. Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition;Applied Surface Science;2015-02
2. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice;Journal of Applied Physics;2014-07-28
3. Combined Kinetic Monte Carlo—Molecular Dynamics Approach for Modeling Phonon Transport in Quantum Dot Superlattices;Journal of Heat Transfer;2013-10-17
4. Growth and self-organization of SiGe nanostructures;Physics Reports;2013-01
5. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 − x Ge x buffer layers;Semiconductors;2012-05
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