Topological Hall effect in Pd/CoZr/MgO multilayer films

Abstract

The topological Hall effect (THE) in annealed Pd/CoZr/MgO multilayers was investigated and disentangled in the temperature range of 50–300 K. The anomalous Hall curves change polarity with decreasing temperature. Moreover, crests and troughs develop in the curves. The topological Hall resistivity is obtained by subtracting the anomalous Hall and ordinary Hall resistivities from the temperature dependence of the total transverse resistivity. The interfacial Dzyaloshinskii–Moriya interaction (DMI) strength is affected by the ambient temperature, annealing temperature, and thickness of the CoZr layer, resulting in the manipulation of the topological Hall effect. The room temperature THE was obtained in this multilayer system, and the maximum THE resistivity reached 0.52 [Formula: see text] cm when the thickness of the CoZr layer was 3.25 nm at 100 K. Our study indicates the potential application of CoZr alloys in magnetic multilayers for the performance of spin textures and THE.