Isothermal electric switching of magnetization in Cr2O3/Co thin film system
Author:
Affiliation:
1. Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2. TDK Corporation, Technology HQ, ICT Device Development Center, Ichikawa 272-8558, Japan
Funder
ALCA-JST
ImPACT
JSPS
Murata Science foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4916826
Reference22 articles.
1. Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
2. Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
3. Theory of the Magnetoelectric Effect in Cr2O3
4. Magnetoelectric Effects in Antiferromagnetics
5. Antiferromagnetic domain switching in Cr<inf>2</inf>O<inf>3</inf>
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