Uncertainty evaluation of Monte Carlo simulated line scan profiles of a critical dimension scanning electron microscope (CD-SEM)

Author:

Khan M. S. S.12ORCID,Mao S. F.3ORCID,Zou Y. B.4ORCID,Li Y. G.2ORCID,Da B.5ORCID,Ding Z. J.16ORCID

Affiliation:

1. Department of Physics, University of Science and Technology of China 1 , Hefei, Anhui 230026, People's Republic of China

2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences 2 , Hefei, Anhui 230031, People's Republic of China

3. Department of Nuclear Science and Engineering, University of Science and Technology of China 3 , Hefei, Anhui 230026, People's Republic of China

4. School of Physics and Electronic Engineering, Xinjiang Normal University 4 , Urumchi, Xinjiang 830054, People's Republic of China

5. Center for Basic Research on Materials, National Institute for Materials Science 5 , Tsukuba, Ibaraki 305-0044, Japan

6. Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China 6 , Hefei, Anhui 230026, People's Republic of China

Abstract

In recent years, precision and accuracy for a more precise critical dimension (CD) control have been required in CD measurement technology. CD distortion between the measurement by a critical dimension scanning electron microscope (CD-SEM) and a reference tool is the most important factor for a more accurate CD measurement. CD bias varies by a CD-SEM and a pattern condition. Therefore, it is urgently needed to identify, characterize, and quantify those parameters that may or may not affect the CD measurement by a CD-SEM. The sensitivity of the Monte Carlo simulated CD-SEM images with multiple physical modeling components has been studied previously. In this study, we demonstrate that the work function and elastic scattering potential models have a significant impact on secondary electron emission intensity, but their influence on the shape of the linescan profile is small, and other factors like the optical energy loss function and dielectric function models have even smaller effects. We have evaluated the uncertainty in the linescan profiles of Si line structures with different sidewall angles due to several different physical factors. It is found that when the CD is evaluated by a peak/valley method, the uncertainty of the CD is negligible. Therefore, it is concluded that the CD value and its related uncertainty are not critically related to the physical factors of the present Monte Carlo simulation model but rely dominantly on the line structure and electron beam parameters.

Funder

National MCF Energy R&D Program of China

Collaborative Innovation Program of Hefei Science Centre, CAS

Natural Science Foundation of Xinjinag Uygur Autonomous Region

National Natural Science Foundation of China

National Magnetic Confinement Fusion Energy Research Project

Youth Innovation Promotion Association of CAS

National Institiute for Materials Science under the Support system for curiosity-driven research, JSPS KAKENHI

Chinese Education Ministry Through "111 Project 2.0"

Kurata Grants from The Hitachi Global Foundation and by the Iketani Science & Technology Foundation

Iketani Science & Technology Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference84 articles.

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