Improved epitaxy of ultrathin praseodymia films on chlorine passivated Si(111) reducing silicate interface formation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3525175
Reference21 articles.
1. Strain and lattice engineering for Ge FET devices
2. Nanostructured Praseodymium Oxide: Preparation, Structure, and Catalytic Properties
3. Mobility of oxygen and catalytic properties of rare earth oxides with respect to oxidation of hydrogen
4. The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems
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3. Growth of Epitaxial 3,4,9,10-Perylene Tetracarboxylic Dianhydride on Bi-Terminated Silicon;The Journal of Physical Chemistry C;2019-02-26
4. Growth and structure of ultrathin praseodymium oxide layers on ruthenium(0001);Physical Chemistry Chemical Physics;2017
5. Ab initio calculation of band alignment of epitaxial La2O3 on Si(111) substrate;AIMS Materials Science;2015
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