Damage calculation and measurement for GaAs amorphized by Si implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97500
Reference12 articles.
1. The Role of Damage in the Annealing Characteristics of Ion Implanted Si
2. Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs
3. Argon implantation in GaAs: Damage and lattice site location analyses
4. High resolution transmission electron microscopy study of Se+‐implanted and annealed GaAs: Mechanisms of amorphization and recrystallization
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