GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973995
Reference23 articles.
1. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications
2. Recent Progress in GaN-Based Light-Emitting Diodes
3. Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs
4. Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
5. Effect of current spreading on the efficiency droop of InGaN light-emitting diodes
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