Comparison of dynamic properties of InP/InAs quantum-dot and quantum-dash lasers
Author:
Affiliation:
1. Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623, Germany
2. King Abdulaziz University, 22254 Jeddah, Saudi Arabia
Funder
EU 7-th framework programm
SFB 787
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4965846
Reference30 articles.
1. Quantum dot based nanophotonics and nanoelectronics
2. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
3. Low threshold, large To injection laser emission from (InGa)As quantum dots
4. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
5. Prevention of gain saturation by multi-layer quantum dot lasers
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