Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4805059
Reference30 articles.
1. Single-layer MoS2 transistors
2. Integrated Circuits and Logic Operations Based on Single-Layer MoS2
3. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
4. How Good Can Monolayer MoS2 Transistors Be?
5. Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map
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2. First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides;Journal of Semiconductors;2018-07
3. Band-edges and band-gap in few-layered transition metal dichalcogenides;Journal of Physics D: Applied Physics;2018-05-02
4. Atomistic study of electrostatics and carrier transport properties of CNT@MS2 (M = Mo, W) and CNT@BN core–shell nanotubes;Journal of Materials Science;2017-03-22
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