Enhanced temperature dependent junction magnetoresistance in La0.7Sr0.3MnO3/Zn(Fe, Al)O carrier induced dilute magnetic semiconductor junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4805052
Reference24 articles.
1. Observation of Minority Spin Character of the New Electron Doped ManganiteLa0.7Ce0.3MnO3from Tunneling Magnetoresistance
2. Magnetotransport properties of a room temperature rectifying tunnel junction made of electron and hole doped manganites
3. p–n diode with hole- and electron-doped lanthanum manganites
4. Giant Electric Field Modulation of Double Exchange Ferromagnetism at Room Temperature in the Perovskite Manganite/Titanatep−nJunction
5. Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure
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