Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector-Reference-Cited by-同舟云学术

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

Published:2016-04-11 Issue:15 Volume:108 Page:152404
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tao B. S.¹²,Barate P.³,Frougier J.⁴^ORCID,Renucci P.³,Xu B.⁵,Djeffal A.¹,Jaffrès H.⁴,George J.-M.⁴,Marie X.³,Petit-Watelot S.¹,Mangin S.¹^ORCID,Han X. F.²^ORCID,Wang Z. G.⁵,Lu Y.¹^ORCID

Affiliation:

1. Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 70239, 54506 Vandœuvre, France

2. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3. Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse, France

4. Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France

5. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

Funder

National Natural Science Foundation of China (NSFC)

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945768

Reference24 articles.

1. Injection and detection of a spin-polarized current in a light-emitting diode

2. Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser

3. Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers

4. Electronic analog of the electro‐optic modulator

5. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

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