Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers
Author:
Affiliation:
1. SCIOCS Co. Ltd., Hitachi, Ibaraki 319-1418, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0051692
Reference36 articles.
1. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
2. Vertical Power p-n Diodes Based on Bulk GaN
3. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
4. Thermal and Electrical Properties of High-Quality Freestanding GaN Wafers with High Carrier Concentration
5. Bulk GaN crystals grown by HVPE
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