Internal thermal stress distribution in InGaAsP/InP lasers-Reference-Cited by-同舟云学术

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Internal thermal stress distribution in InGaAsP/InP lasers

Published:1986-10-06 Issue:14 Volume:49 Page:895-897
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu J. M.,Chen Y. C.,Wayne S. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.97528

Reference13 articles.

1. Interface stress of AlxGa1−xAs–GaAs layer structures

2. Calculated stresses in multilayered heteroepitaxial structures

3. Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layers

4. Generalized formula for curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structures

5. Compensation of internal thermal stresses in InGaAsP/InP lasers for polarization stabilization

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1. Design optimization for 10Gbps electro absorption modulator LD packaging;53rd Electronic Components and Technology Conference, 2003. Proceedings.

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