Monte Carlo study of device characteristics of GaN-based avalanche photodiode devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3176935
Reference37 articles.
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1. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes;IEEE Transactions on Electron Devices;2023-07
2. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes;IEEE Transactions on Electron Devices;2023-06
3. A review on III–V compound semiconductor short wave infrared avalanche photodiodes;Nanotechnology;2022-03-09
4. Back-illuminated AlGaN heterostructure solar-blind avalanche photodiodes with one-dimensional photonic crystal filter;Optics Express;2020-02-18
5. A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure;Applied Physics Letters;2016-12-12
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