Modulation effects near the GaAs absorption edge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346891
Reference12 articles.
1. Photoluminescence of epitaxial n-type GaAs at 20°K
2. Electroreflectance Studies in GaAs
3. Electroreflectance at a Semiconductor-Electrolyte Interface
4. Electroreflectance Studies of InAs, GaAs, and (Ga,In) As Alloys
5. Electroreflectance of impurities in GaAs: Manganese, silicon and cadmium
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3. Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells;physica status solidi (a);2007-02
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5. Characterization of Gap States in an Amorphous SiN[sub x] Film Grown on GaAs Substrate Using Modulation Spectroscopic Techniques;Electrochemical and Solid-State Letters;2006
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