Natural quantum dots in the InAs∕GaAs wetting layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2918836
Reference24 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer
3. Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots
4. Tunnel current in quantum dot infrared photodetectors
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1. Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy;Nanotechnology;2023-01-23
2. Optical and Electronic Properties of Symmetric InAs/(In,Al,Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters;Physical Review Applied;2020-12-17
3. Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation;Journal of Applied Physics;2020-02-14
4. Interfacing quantum emitters with propagating surface acoustic waves;Journal of Physics D: Applied Physics;2018-08-02
5. Disorder-induced natural quantum dots in InAs/GaAs nanostructures;Opto-Electronics Review;2018-03
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