Probing negative differential resistance on Si(111)-3×3-Ag surface with scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3173821
Reference22 articles.
1. Structures and electronic transport on silicon surfaces
2. Ag∕Si(111)3×3: Surface band splitting and the inequivalent triangle model
3. Fermi-level pinning and surface-state band structure of the Si(111)-(√3×√3)R30°-Ag surface
4. Electronic structure of the Si(111)-21×21-(Ag+Au) surface
5. Electronic structure of Ag-induced3×3and21×21superstructures on the Si(111) surface studied by angle-resolved photoemission spectroscopy and scanning tunneling microscopy
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1. Emergence of metallic surface states and negative differential conductance in thin β-FeSi2 films on Si(001);Journal of Physics: Condensed Matter;2023-02-10
2. Lanthanum-induced quasi-one-dimensional reconstructions on Si(111);Surface Science;2018-08
3. Observation of room-temperature negative differential resistance in Gd-doped Si nanowires on Si(110) surface;Applied Physics Letters;2012-07-30
4. Negative Differential Resistance in a Hybrid Silicon-Molecular System: Resonance between the Intrinsic Surface-States and the Molecular Orbital;ACS Nano;2012-07-18
5. Schäferet al.Reply:;Physical Review Letters;2009-11-11
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