Modeling heterogeneous melting in phase change memory devices-Reference-Cited by-同舟云学术

Modeling heterogeneous melting in phase change memory devices

Published:2019-01-28 Issue:4 Volume:114 Page:043502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Scoggin J.¹^ORCID,Woods Z.¹,Silva H.¹^ORCID,Gokirmak A.¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5067397

Reference26 articles.

1. Melting and superheating of crystalline solids: From bulk to nanocrystals

2. Modeling of Phase-Change Memory: Nucleation, Growth, and Amorphization Dynamics During Set and Reset: Part II—Discrete Grains

3. Modeling of Thermoelectric Effects in Phase Change Memory Cells

4. H. Silva , A. Faraclas , and A. Gokirmak , in Nanoscale Semiconductor Memories Technology Applications, edited by S. Kurinec and K. Iniewski , 1st ed. ( CRC Press, Boca Raton, 2014), pp. 307–332.

5. High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

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