Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347692
Reference12 articles.
1. Scanning electron acoustic microscopy observations of twins and grain boundaries in III‐V materials
2. Cathodoluminescence from grain boundaries in MgO and GaP
3. Spatial distribution of vacancy defects in GaP wafers
4. Composite character of the red band emission in LEC GaP:S
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2. Solidification features of cast and vertically fed Te-doped GaSb materials;Journal of Crystal Growth;2006-08
3. Cathodoluminescence from Nanocrystalline Silicon Films in the Scanning Electron Microscope;Solid State Phenomena;1998-12
4. Cathodoluminescence from defects in electron-irradiated InP;Materials Science and Engineering: B;1994-05
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