Plasma heating in highly excited GaN/AlGaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122487
Reference10 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Optical gain in GaInN/GaN heterostructures
3. Microscopic theory of gain for an InGaN/AlGaN quantum well laser
4. Optical gain in wide bandgap GaN quantum well lasers
5. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
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1. GaN Nanostructure-Based Light Emitting Diodes and Semiconductor Lasers;Journal of Nanoscience and Nanotechnology;2014-02-01
2. Effect of inserted ultrathin barrier layer on luminescence of GaN/Al0.5Ga0.5N multiple quantum wells;Applied Physics Letters;2009-09-07
3. The effect of coupling barrier thickness on structural and optical properties in asymmetrically coupled GaN/Al0.5Ga0.5N/GaN multiquantum wells;Journal of Applied Physics;2007-11-15
4. Carrier dynamics with blue emission in asymmetrically coupled GaN∕Al0.5Ga0.5N∕GaN multiquantum wells;Applied Physics Letters;2007-04-16
5. Parameter-dependent third-order nonlinear susceptibility of parabolic InGaN/GaN quantum dots;Microelectronics Journal;2007-03
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