Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363013
Reference43 articles.
1. Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy
2. Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy
3. Evolution of surface morphology and strain during SiGe epitaxy
4. Growth ripples upon strained SiGe epitaxial layers on Si and misfit dislocation interactions
5. Interface morphology and relaxation in high temperature grown superlattices
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1. Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques;Semiconductor Science and Technology;2018-09-05
2. Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Effect on SiGe Light Emission;ECS Transactions;2016-08-19
3. Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission;Frontiers in Materials;2016-03-07
4. Growth mode of epitaxial superlattices[BaCuO2+x]2/[CaCuO2]3on vicinal (001)SrTiO3substrates studied by x-ray diffraction;Physical Review B;2002-04-22
5. Anomalous Elastic Properties of Si/Ge Superlattices: The Role of Interfaces;physica status solidi (a);2001-12
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