Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires-Reference-Cited by-同舟云学术

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Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires

Published:2013-10-07 Issue:15 Volume:103 Page:152101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lymperakis L.,Weidlich P. H.,Eisele H.,Schnedler M.,Nys J.-P.,Grandidier B.,Stiévenard D.,Dunin-Borkowski R. E.,Neugebauer J.,Ebert Ph.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4823723

Reference30 articles.

1. Epitaxial III−V Nanowires on Silicon

2. A ‘bed of nails’ on silicon

3. GaN based nanorods for solid state lighting

4. Single gallium nitride nanowire lasers

5. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

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3. Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces;Journal of Vacuum Science & Technology A;2024-01-29

4. Atomically resolved study of the unpinned GaN ( 101¯0 ) surface by cross-sectional scanning tunneling microscopy;Physical Review B;2023-08-15

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