Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories-Reference-Cited by-同舟云学术

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Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories

Published:2006-10-15 Issue:8 Volume:100 Page:086104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Puglisi R. A.,Lombardo S.,Corso D.,Crupi I.,Nicotra G.,Perniola L.,De Salvo B.,Gerardi C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2359626

Reference8 articles.

1. Silicon nanocrystal based memory devices for NVM and DRAM applications

2. Nucleation kinetics of Si quantum dots on SiO2

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