Misfit dislocations in (111)A InP/In0.53Ga0.47As/InP double heterostructure wafers grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332957
Reference21 articles.
1. LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InP
2. Zn‐diffused In0.53Ga0.47As/InP avalanche photodetector
3. Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
4. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
5. 1.0–1.6 μm planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dislocations in strained-layer epitaxy: theory, experiment, and applications;Materials Science Reports;1991-11
2. Pseudomorphic Growth and Nucleation of Misfit Dislocations in the Epitaxial System (001) InP/In1−xGraxAs. I. Pseudomorphic Growth, Tetragonal Distortion, and Lattice Relaxation by Dislocation Nucleation;Physica Status Solidi (a);1989-04-16
3. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area;Journal of Applied Physics;1989-03-15
4. Experimental study of misfit dislocations in InP-based heterostructures;Materials Letters;1989-02
5. Scanning Photoluminescence Assessment MOCVD InGaAs/InP Lattice Mismatched Heterostructures During the Fabrication of Photodiode Arrays;ESSDERC ’89;1989
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