Elemental marking of Si on Si(100) interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107921
Reference14 articles.
1. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
2. Molecular layer epitaxy of silicon
3. Self-Limiting Adsorption of SiCl2H2and Its Application to the Layer-by-Layer Photochemical Process
4. Adsorption and desorption kinetics for SiH2Cl2 on Si(111) 7×7
5. Scattering and Recoiling Spectrometry: An Ion's Eye View of Surface Structure
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1. Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe;Journal of Crystal Growth;2000-06
2. Atomic Structure and Bonding of Boron-Induced Reconstructions on Si(001);Physical Review Letters;1995-01-16
3. An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001);Surface Science;1994-05
4. Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1994-04-30
5. Simulation studies of Ge surface segregation during gas source MBE growth of Si/Si1−xGex heterostructures;Surface Science;1993-10
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