Monte Carlo calculation of temperature dependence of the transport properties in compensated GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349386
Reference22 articles.
1. Low field mobility, effective saturation velocity and performance of submicron GaAs MESFETs
2. Measurements of the p-n product in heavily doped epitaxial emitters
3. Measurement of the low‐field electron mobility and compensation ratio profiles in GaAs field‐effect transistors
4. Compensation in heavily dopedn‐type InP and GaAs
5. Electron mobility and free-carrier absorption in InP; determination of the compensation ratio
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