Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching-Reference-Cited by-同舟云学术

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Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching

Published:2002-08-26 Issue:9 Volume:81 Page:1660-1662
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Watanabe Takayuki,Funakubo Hiroshi,Saito Keisuke,Suzuki Toshimasa,Fujimoto Masayuki,Osada Minoru,Noguchi Yuji,Miyayama Masaru

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1503850

Reference16 articles.

1. Lanthanum-substituted bismuth titanate for use in non-volatile memories

2. Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

3. Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

4. Domain structure and polarization reversal in films of ferroelectric bismuth titanate

5. Electro‐optic contrast observations in single‐domain epitaxial films of bismuth titanate

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4. Ferroelectric properties of epitaxial Bi2SiO5 thin films grown on SrTiO3 substrates with various orientations;Japanese Journal of Applied Physics;2019-08-21

5. Impact of plasma enhanced atomic layer deposited HfO2 buffer layer on the structural, electrical and ferroelectric properties of metal/ferroelectric/insulator/semiconductor gate stack for non-volatile memory applications;Journal of Materials Science: Materials in Electronics;2019-07-22

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