Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement-Reference-Cited by-同舟云学术

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

Published:2021-03-29 Issue:13 Volume:118 Page:133503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ting David Z.¹^ORCID,Soibel Alexander¹^ORCID,Khoshakhlagh Arezou¹,Keo Sam A.¹,Fisher Anita M.¹,Rafol Sir B.¹,Höglund Linda¹,Hill Cory J.¹,Pepper Brian J.¹,Gunapala Sarath D.¹

Affiliation:

1. NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA

Funder

Jet Propulsion Laboratory

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0047937

Reference28 articles.

1. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

2. Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices

3. Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling

4. High operating temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices

5. Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

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