Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode-Reference-Cited by-同舟云学术

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Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode

Published:2010-08-16 Issue:7 Volume:97 Page:072513
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Moriyama Takahiro,Gudmundsen Theodore J.,Huang Pinshane Y.,Liu Luqiao,Muller David A.,Ralph Daniel C.,Buhrman Robert A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3481798

Reference21 articles.

1. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

2. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

3. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

4. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

5. Current-driven excitation of magnetic multilayers

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2. Ion beam etching dependence of spin–orbit torque memory devices with switching current densities reduced by Hf interlayers;APL Materials;2021-09-01

3. Controllable intrinsic Gilbert damping in Pt buffered [Co/Ni]n multilayers with enhanced perpendicular magnetic anisotropy;Journal of Magnetism and Magnetic Materials;2021-02

4. Influence of substrate (Si and glass), Cu under-layer, in situ annealing of Ta/Cu and post-annealing on magnetic properties of [Co(0.3 nm)/Ni(0.6 nm)]4, 10 multilayer thin films;Journal of Materials Science: Materials in Electronics;2020-06-12

5. Fast, reliable spin-orbit-torque switching in three terminal magnetic tunnel junctions with Hf dusting layer;Spintronics XI;2018-09-20

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