GaAs oxidation with Townsend-discharge three-electrode microreactor
Author:
Affiliation:
1. Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
Funder
Russian Academy of Sciences
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5042487
Reference33 articles.
1. Chemical Vapor Deposition
2. Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures
3. Plasmasurface interactions in the processing of iiiv semiconductor materials
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1. Optoelectronic Properties of GaAs, GaP, and ZnSe Cathodes in a Plasma–Semiconductor Cell;Advances in Optoelectronic Materials;2021
2. Experiment and simulation of the characteristics and mechanisms of self-oscillations in parallel-plate glow discharges;Journal of Applied Physics;2020-06-07
3. Townsend discharge in argon and nitrogen: Study of the electron distribution function;Journal of Applied Physics;2019-11-07
4. Study of GaAs oxidation in the low-current Townsend discharge;Journal of Physics: Conference Series;2019-11-01
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