Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces-Reference-Cited by-同舟云学术

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Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces

Published:2010-05-03 Issue:18 Volume:96 Page:183504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jany R.,Breitschaft M.,Hammerl G.,Horsche A.,Richter C.,Paetel S.,Mannhart J.,Stucki N.,Reyren N.,Gariglio S.,Zubko P.,Caviglia A. D.,Triscone J.-M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3428433

Reference9 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Two-dimensional electron liquid state atLaAlO3-SrTiO3interfaces

3. Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures

4. Electric field control of the LaAlO3/SrTiO3 interface ground state

5. Atomic Control of the SrTiO3 Crystal Surface

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2. Recent progress in voltage control of magnetism: Materials, mechanisms, and performance;Progress in Materials Science;2017-06

3. Magnetism, transport, and thermodynamics in two-dimensional half-filled Hubbard superlattices;Physical Review B;2017-02-23

4. Electro-mechanical response of top-gated LaAlO3/SrTiO3;Journal of Applied Physics;2016-01-14

5. LaAlO3 thickness window for electronically controlled magnetism at LaAlO3/SrTiO3 heterointerfaces;Applied Physics Letters;2015-08-24

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