Effect of oxygen content on piezoresistivity of indium tin oxide thin films prepared by pulsed laser deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1868062
Reference17 articles.
1. Applications and Processing of Transparent Conducting Oxides
2. Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices
3. Preparation and piezoresistive properties of reactively sputtered indium tin oxide thin films
4. A self-compensated ceramic strain gage for use at elevated temperatures
5. The effect of strain on the resistivity of indium tin oxide films prepared by pulsed laser deposition
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2. Effect of nitrogen partial pressure on the piezoresistivity of magnetron sputtered ITO thin films at high temperatures;Applied Surface Science;2023-01
3. In situ electrical and mechanical study of Indium Tin Oxide films deposited on polyimide substrate by Xe ion beam sputtering;Thin Solid Films;2022-01
4. Silicon MEMS Nanomechanical Membrane Flexure Sensor With Integrated High Gauge Factor ITO;Journal of Microelectromechanical Systems;2021-12
5. Effect of heat treatment atmosphere on the piezoresistivity of indium tin oxide ceramic strain sensor;Ceramics International;2019-10
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