Electrical and structural characterization of a single GaSb∕InAs∕GaSb quantum well grown on GaAs using interface misfit dislocations-Reference-Cited by-同舟云学术

Electrical and structural characterization of a single GaSb∕InAs∕GaSb quantum well grown on GaAs using interface misfit dislocations

Published:2008 Issue:7 Volume:104 Page:074901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Eyink Kurt G.,Tomich David H.,Mitchel William C.,Grazulis Lawrence,Carlin John A.,Mahalingam Krishnamurthy,Jallipalli Anitha,Balakrishnan Ganesh,Huffaker Diana,Elhamri Said

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference20 articles.

1. Defects in epitaxial multilayers I. Misfit dislocations

2. Molecular beam epitaxial growth of lattice‐mismatched In0.77Ga0.23As on InP

3. GaAsP-GaInAsSb superlattices: A new structure for electronic devices

4. Transport in strain relaxed In0.15Al0.85As/In0.17Ga0.83As heterojunctions

5. Interfacial Dislocations in the GaSb/GaAs (001) Heterostructure

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