Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors

Author:

Dieme Robert,Zhang Jack,Rudawski Nicholas G.,Jones Kevin,Bosman Gijs,Sheplak Mark,Nishida Toshikazu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference20 articles.

1. R. Saini, “ Design of a MEMS based piezoresistive microphone,” M.S. thesis (University of Florida, Gainesville, FL, 2001).

2. V. Chandrasekaran, “ Thermoelastically actuated acoustic proximity sensor with integrated electrical through-wafer interconnects,” Ph.D. disssertation (University of Florida, Gainesville, FL, 2004).

3. Excess noise measurements in ion-implanted silicon resistors

4. Annealing of ion‐implanted resistors reduces the 1/ f  noise

5. Volume and temperature dependence of the noise parameter α in Si

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