Temperature dependence of recombination processes of photogenerated carriers in a quantum-well structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371730
Reference17 articles.
1. Influence of barrier height on carrier dynamics in strainedInxGa1−xAs/GaAs quantum wells
2. Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1−xAs quantum-well structures
3. Thermal escape of carriers out of GaAs/AlxGa1−xAs quantum-well structures
4. Influence of barrier height on carrier lifetime inGa1−yInyP/(AlxGa1−x)1−yInyP single quantum wells
5. The optical processes in AlInP/GaInP/AlInP quantum wells
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