Numerical analysis of the transient response in amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366184
Reference9 articles.
1. An Analysis of the Dispersive Charge Transport in Vitreous 0.55 As2S3: 0.45 Sb2S3
2. A physical interpretation of dispersive transport in disordered semiconductors
3. Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States ina-As2Se3
4. The relationship between transient and steady-state photoconductivity in amorphous semiconductors
5. Transient Photoconductivity from the Steady State in Undoped Amorphous Silicon
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2. On the Response Time of Thin-Film Silicon Lateral Metal-Semiconductor-Metal Photodetectors;IEEE Electron Device Letters;2014-07
3. Decay from steady‐state photocurrent in amorphous semiconductors;physica status solidi (c);2004-03
4. Fluence- and temperature-dependent studies of carrier dynamics in radiation-damaged silicon-on-sapphire and amorphous silicon;Journal of Applied Physics;2003-06
5. Transient Decay from the Steady-State in Microcrystalline Silicon;MRS Proceedings;2002
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