Preparation and structure of PbZrO3epitaxial films by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109596
Reference6 articles.
1. Preparation and Switching Kinetics of Pb(Zr, Ti)O3Thin Films Deposited by Reactive Sputtering
2. The growth of ferroelectric oxides by MOCVD
3. Epitaxy‐induced phase of near‐stoichiometry PbTiO3films prepared by metalorganic chemical vapor deposition
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1. A comprehensive review on the progress of lead zirconate-based antiferroelectric materials;Progress in Materials Science;2014-06
2. First-principles investigations of elastic properties and energetics of antiferroelectric and ferroelectric phases ofPbZrO3;Physical Review B;2008-03-14
3. Microstructure and electrical properties of (120)O-oriented and of (001)O-oriented epitaxial antiferroelectric PbZrO3 thin films on (100) SrTiO3 substrates covered with different oxide bottom electrodes;Journal of Applied Physics;2007-08-15
4. Atomic layer deposition of PbZrO3 thin films;Applied Surface Science;2007-04
5. Structural and Dielectric Characterization of Nanocrystalline (Ba, Pb)ZrO3Developed by Reverse Micellar Synthesis;Journal of the American Ceramic Society;2006-10
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