Vacancy-type defects in strained-Si layers deposited on SiGe∕Si structures probed by using monoenergetic positron beams
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1830086
Reference27 articles.
1. Nonstationary electron/hole transport in sub-0.1 μm MOS devices: correlation with mobility and low-power CMOS application
2. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
3. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
4. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s
5. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
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1. Positron annihilation studies of defects in Si1-xGex/SOI heterostructures;physica status solidi (c);2009-11
2. Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices;Japanese Journal of Applied Physics;2007-04-24
3. Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation;Journal of Applied Physics;2006-09-15
4. Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams;Journal of Applied Physics;2006-08
5. Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams;Applied Physics Letters;2006-06-19
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