Interaction of H, O2, and H2O with 3C-SiC surfaces
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1602052
Reference29 articles.
1. Oxynitridation of cubic silicon carbide (100) surfaces
2. Stability, reconstruction, and surface electronic states of group-III atoms on SiC(111)
3. SiO2/6H-SiC(0001)3×3 initial interface formation by Si overlayer oxidation
4. Characterization of reconstructed SiC(100) surfaces using soft‐x‐ray photoemission spectroscopy
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