Electronic structure and magnetism of Ge(Sn)TMXTe1−X (TM = V, Cr, Mn): A first principles study-Reference-Cited by-同舟云学术

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Electronic structure and magnetism of Ge(Sn)TMXTe1−X (TM = V, Cr, Mn): A first principles study

Published:2016-12 Issue:12 Volume:6 Page:125005
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liu Yong¹²^ORCID,Bose S. K.²^ORCID,Kudrnovský J.³

Affiliation:

1. State Key Laboratory of Metastable Materials Science and Technology and School of Science, Yanshan University, Qinhuangdao, 066004, China

2. Physics Department, Brock University, St. Catharines, Ontario L2S 3A1, CANADA

3. Institute of Physics, Academy of the Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference48 articles.

1. Magnetic order effects on electric susceptibility hole mass of Sn1-x MnxTe

2. Carrier concentration dependence of the magnetic interactions in Sn(Mn)Te

3. Carrier induced ferromagnetism in epitaxial Sn1−Mn Te layers

4. Neutron diffraction on the diluted magnetic semiconductor Sn1−xMnxTe

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1. Magnetic Interactions in IV–VI Diluted Magnetic Semiconductors;physica status solidi (b);2022-03-21

2. Large‐Area Epitaxial Film Growth of van der Waals Ferromagnetic Ternary Chalcogenides;Advanced Materials;2021-09-18

3. First-principles study and experimental characterization of metal incorporation in germanium telluride;Journal of Applied Physics;2020-12-14

4. Structure and physical properties of quaternary Heusler alloy NiMnCuSb;Journal of Magnetism and Magnetic Materials;2017-12

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