Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1412835
Reference22 articles.
1. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
2. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
3. Photoluminescence study of GaN/InGaN multiquantum well structures at room temperature
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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1. Useful studies on the optical properties of annealed and non annealed InGaN/GaN single QW LEDs, with different dopings in the barrier;Optical Materials;2018-10
2. Effects of a delta-layer insertion on the ultraviolet light emission characteristics of III-nitride quantum well structures;Superlattices and Microstructures;2017-12
3. Dip-Shaped AlGaN/AlN Light-Emitting Diodes With Delta-Layer Containing Boron;IEEE Photonics Technology Letters;2017-06-15
4. Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells;SPIE Proceedings;2016-02-26
5. Analysis of Interdiffused InGaN Quantum Wells for Visible Light-Emitting Diodes;Journal of Display Technology;2013-04
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