Studies on high resolution x-ray diffraction, optical and transport properties of InAsxSb1−x∕GaAs (x⩽0.06) heterostructure grown using liquid phase epitaxy-Reference-Cited by-同舟云学术

Studies on high resolution x-ray diffraction, optical and transport properties of InAsxSb1−x∕GaAs (x⩽0.06) heterostructure grown using liquid phase epitaxy

Published:2004-11 Issue:9 Volume:96 Page:4989-4997
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dixit V. K.,Bansal Bhavtosh,Venkataraman V.,Bhat H. L.,Chandrasekharan K. S.,Arora B. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1784620

Reference47 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYS

3. Growth and characterization of InSbBi for long wavelength infrared photodetectors

4. Novel Sb-based materials for uncooled infrared photodetector applications

5. Effects influencing the structural integrity of semiconductors and their alloys

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