Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373788
Reference21 articles.
1. Fabrication of 0.1 μm metal oxide semiconductor field‐effect transistors with the atomic force microscope
2. Fabrication of nanometer‐scale side‐gated silicon field effect transistors with an atomic force microscope
3. Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system
4. Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperature
5. Basic mechanisms of an atomic force microscope tip-induced nano-oxidation process of GaAs
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