Quantum efficiency and spectral response of compositionally graded HgCdTeP‐nheterojunction photodiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357333
Reference20 articles.
1. Large improvement in HgCdTe photovoltaic detector performances at LETI
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3. Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe
4. State of the art of Hg-melt LPE HgCdTe at Santa Barbara Research Center
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1. Study on photoelectric characteristics of compositionally graded HgCdTe detector;J INFRARED MILLIM W;2023
2. Simulation of the Influence of Absorber Thickness and Doping Concentration on Non-equilibrium Photovoltaic Long-Wavelength HgCdTe Infrared Detectors;Journal of Electronic Materials;2023-04-27
3. Performance Analysis of p-LPZO/n-GZO and p-SZO/n-GZO Homojunction UV Photodetectors;Superlattices and Microstructures;2020-04
4. Effect of composition distribution in the HgCdTe film on spectral response of device;Journal of Infrared and Millimeter Waves;2013
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