Spatially resolved photoconductivity of polycrystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329118
Reference16 articles.
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2. Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells
3. Theory of the electrical and photovoltaic properties of polycrystalline silicon
4. Passivation of grain boundaries in polycrystalline silicon
5. Effect of grain boundaries in silicon on minority‐carrier diffusion length and solar‐cell efficiency
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recombination properties of photogenerated minority carriers in polycrystalline silicon;Journal of Applied Physics;1991-10
2. Transient photoconductivity analysis near a grain boundary of polycrystalline semiconductors;Solid State Communications;1987-11
3. Comparisons of vacuum surface effects on commercial photodiodes: spatial response uniformity via a computerized laser scanning system;Applied Optics;1987-01-01
4. Effects of Grain Boundaries and Intragrain Defects in Silicon for Photovoltaic Applications;Silicon Processing for Photovoltaics II;1987
5. Bibliography of selected papers on polycrystalline silicon;Solar Cells;1985-12
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